mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 2 parameter value unit v ds @ t j, max 6 5 0 v r ds(on), max 0 .195 ? v th , typ 3 v i d 20 a q g , typ 44 n c order code marking temp. range package packing rohs status mm p60 r 195 p b t h 6 0r 195 p b - 55 ~ 150 o c to - 220 tube compliant mm p60 r 195 p b 600 v 0.195 ? n - channel mosfet ? description m m p6 0r 195 p b is power mosfet using m agnachip s advanced super junction technology that can realize very low on - resistance and gate charge. it will provide much high efficiency by using optimized charge coupling technology. these user friendly devices give an ad vantage of low emi to designers as well as low switching loss . ? features ? low power loss by high speed switching and low on - resistance ? 100% avalanche tested ? green package C p b free plating, halogen free ? key paramete r s ? ordering information ? applications ? pfc power supply stages ? switching applications ? adapter d g s ? package & internal circui t g d s
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 3 parameter symbol rating unit note drain C s ource voltage v dss 600 v gate C source voltage v gss 30 v continuous drain current i d 20 a t c =25 o c 12.7 a t c =100 o c pulsed drain current (1 ) i dm 60 a power dissipation p d 154 w single - pulse avalanche energy e as 420 mj mosfet dv/dt ruggedness dv/dt 50 v/ns diode dv/ dt ruggedness ( 2 ) dv/dt 15 v/ns storage temperature t stg - 55 ~150 o c maximum operating junction temperature t j 150 o c 1) pulse width t p limited by t j,max 2) i sd i d , v ds peak v (br)dss parameter symbol value unit thermal resistance, junction - case max r thjc 0.81 o c /w thermal resistance, junction - ambient max r thja 62.5 o c /w ? thermal characteristics ? absolute maximum rating (tc=25 o c unless otherwise specified)
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 4 parameter symbol min. typ. max. unit test condition drain C s ource breakdown voltage v (br)dss 600 - - v v gs = 0v, i d = 0.25ma gate threshold voltage v gs(th) 2 3 4 v v ds = v gs , i d = 0.25ma zero gate voltage drain current i dss - - 1 u a v ds = 600 v, v gs = 0v gate leakage current i gss - - 100 na v gs = 3 0v, v ds = 0v drain - source on state resistance r ds(on) - 0.17 0.195 ? v gs = 10v, i d = 7.3 a parameter symbol min. typ. max. unit test condition input capacitance c iss - 1569 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 999 - reverse transfer capacitance c rss - 56 - effective output capacitance energy related ( 4 ) c o(er) - 47 - v ds = 0v to 480 v, v gs = 0v, f = 1.0mhz turn on delay time t d(on) - 24 - ns v gs = 10v, r g = 2 5, v ds = 300 v, i d = 20a rise time t r - 50 - turn off delay time t d(off) - 150 - fall time t f - 46 - total gate charge q g - 44 - nc v gs = 10v, v ds = 480 v, i d = 20a gate C source charge q gs - 11 - gate C drain charge q gd - 19 - gate resistance r g - 2.2 - ? v g s = 0v , f = 1.0mhz 3 ) c o(er) is a capacitance that gives the same stored energy as c oss while v ds is rising from 0v to 80% v (br)dss ? static characteristics (t c =25 o c unless otherwise specified) ? dynamic characteristics (t c =25 o c unless otherwise specified)
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 5 parameter symbol min. typ. max. unit test condition continuous diode forward current i s - - 20 a diode forward voltage v sd - - 1.4 v i s = 20 a, v gs = 0 v reverse recovery time t rr - 403 - ns i s = 20 a di/dt = 100 a/ u s v dd = 1 00 v reverse recovery charge q rr - 6.1 - u c reverse recovery current i r r m - 30.3 - a ? r e verse diode characteristics (t c =25 o c unless otherwise specified)
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 6 ? characteristic graph
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 7
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 8
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 9 ? test circuit
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 10 ? physical dimension 3 leads , to - 220 note : package body size, length and width do not include mold flash, protrusions and gate burrs
mm p60r195 pb datasheet jan. 2018 revision 1.0 magnachip semiconductor ltd . 11 disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magna chip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider re sponsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered tra demark of magnachip semiconductor ltd.
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